论文部分内容阅读
Dark current characteristics of InP-based InGaAs photodetectors with different cut-off wavelengths
【机 构】
:
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and I
【出 处】
:
The 13th International Conference on Mid-Infrared Optoelectr
【发表日期】
:
2016年10期
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