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Resistive switching (RS) phenomenon induced by redox in oxide electrolyte shows fascinating prospects for potential applications in resistance random access memory (RRAM), analog circuits and neuromorphic computing [1]. Under the external electric stimuli, the conductivity of RRAM can repeatedly change between high resistive state (HRS) and low resistive state (LRS). Based on the characteristics of RS hysteresis loop, the RS behavior can be classified as four modes: threshold switching, bipolar switching, unipolar switching and abnormal unipolar switching.