Recent demand from the aerospace industry for improved health monitoring in aircraft and jet engines has motivated the investigation of sensors that can long term stably operate in harsh environments including those of high temperature,high pressure,humidity and vibration.Tantalum nitride is a hard material,chemically inert,corrosion resistant,and has good shock-and heat-resistant properties.It is reported as an obvious candidates for use for strain measurements.This paper presents the in-situ deposition of Ta-N thin films on Ni-based high temperature alloy by middle frequency sputtering in an argon-nitrogen atmosphere (Ar-N2(5%~60%)).Al2O3 thin films deposited by middle frequency sputtering in an argon-oxygen atmosphere (Ar-O2(10%~50%)) were inserted between Ni-based alloy and Ta-N thin films as an insulating layer.Under optimum deposition conditions,The Al2O3 thin films were obtained with good insulating properties,and the Ta-N thin films were obtained with a high electrical resistivity,ρ =2200μΩ.cm,a low temperature coefficient of resistance,TCR=90 ppm/℃,and a good longitudinal gauge factor,GF=5.6.The fabricated Ta-N thin films are expected to be used in strain sensor and micromachined pressure.