【摘 要】
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The layered MnSb2Se4 monoclinic phase material was reported to be a narrow band semiconductor having large Seebeck coefficient,intrinsically low thermal conductivity,but humbled thermoelectric zT valu
【机 构】
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Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sci
【出 处】
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第六届海内外中华青年材料科学技术研讨会暨第十五届全国青年材料科学技术研讨会
论文部分内容阅读
The layered MnSb2Se4 monoclinic phase material was reported to be a narrow band semiconductor having large Seebeck coefficient,intrinsically low thermal conductivity,but humbled thermoelectric zT values due to low carrier concentrations and high electrical resistivity.Here,we report that the Cu substituted Mn1-xCuxSb2Se4(0 ≤ x ≤ 0.35)display the resonant doping behavior with increased carrier concentrations of approximately~1019 cm-3,leading to significantly enhanced power factor(PF)and overall thermoelectric figure of merit zTs in the whole temperature range.For the optimized composition Mn0.v5Cu0.25Sb2Se4,the PF reaches to 0.26 mWm-1 K-2 at 773 K,coupled with the low thermal conductivity of 0.62 WK-1m-1 to 0.32 WK-1m-1 over the whole temperature range,a peak zT of~0.63 at 773 K is achieved,which is 100%increase in comparison to the undoped MnSb2Se4.Such high zThas been rarely seen in those thermoelectric materials with low symmetry of crystallization,implying that Cu-doped MnSb2Se4 could be considered as a new platform of thermoelectric research for intermediate temperature power generations.
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