Among the emerging computing technologies with superior performances such as high density and low cost,high endurance and long retention,fast operating speed and low energy consumption,resistive switching (RS) effect in metal/oxide/metal configuration has attracted significant attention for its promising applications in non-volatile resistive random access memory,artificial neural computing and reconfigurable logic operation fields.1 Meanwhile,photochemical activated sol-gel method is an interesting and important method for fabrication of electronic thin films and electrochemical materials.