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  5. Properties of zinc oxide thin films grown on silicon wafers by pulsed laser deposition

Properties of zinc oxide thin films grown on silicon wafers by pulsed laser deposition

来源 :2015 Shanghai Thin Film Conference(2015上海薄膜国际会议) | 被引量 : 0次 | 上传用户：GPSCMP
【摘 要】
：
Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide on(111)p-type silicon wafers within a versatile high vacuum laser deposition system.Pressure,target temperat
【作 者】
：
Y.Li J.M.Wrobel M.B.Kruger 
【机 构】
：
Department of Physics and Astronomy,University of Missouri-Kansas City,Kansas City,MO 64110,USA
【出 处】
：
2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)
【发表日期】
：
2015年6期
【关键词】
：
pulsed laser deposition thin films ZnO 
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　　Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide on(111)p-type silicon wafers within a versatile high vacuum laser deposition system.Pressure,target temperature and distance from the target to the substrate can be adjusted in the system.Scanning electron microscopy,energy dispersive X-ray spectroscopy,X-ray diffraction spectroscopy and eilipsometry had been used to analyze the structures and properties of ZnO thin film products.
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