Semiconductor growth features understood by DFT analysis:precursor reactivity and interfaces of GaP/

来源 :The 15th ICQC International Congress of Quantum Chemistry(第1 | 被引量 : 0次 | 上传用户：ly_exe

【摘要】

：

New semiconductor materials are grown on conventional Si(001) substrates in Metal-Organic Vapour Phase Epitaxy(MOVPE) procedures requiring sensitive precursor molecules that cleanly decompose and form

【作者】

：

A.Stegmüller R.Tonner

【机构】

：

Department of Chemistry,University of Marburg,Germany

【出处】

：

The 15th ICQC International Congress of Quantum Chemistry(第1

【发表日期】

：

2015年5期

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