Crystallization and Dielectric Properties of CVI Si3N4-SiCN Composite

来源 :The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会) | 被引量 : 0次 | 上传用户：chubiao5201314

【摘要】

：

　　Si3N4-SiCN composite ceramics were fabricated by chemical vapor infiltration(CVI)using Si-C-N-HCl system as precursor and porous Si3N4 ceramic as preformed.

【作者】

：

jimeiXue;xiaoweiYin;xiaofeiLiu;litongZhang;laifeiCheng;

【机构】

：

Science and Technology on Thermostructure Composite Materials Laboratory,Northwestern Polytechnical

【出处】

：

The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)

【发表日期】

：

2014年期

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　　Si3N4-SiCN composite ceramics were fabricated by chemical vapor infiltration(CVI)using Si-C-N-HCl system as precursor and porous Si3N4 ceramic as preformed.The thermal stability of an amorphous silicon carbonitride ceramic was studied as a function of annealed temperatures in nitrogen atmosphere.

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Crystallization and Dielectric Properties of CVI Si3N4-SiCN Composite

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