论文部分内容阅读
The influence of the Si02 gate insulator thickness to the performance and Bias-voltage stress stabil
【机 构】
:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
【出 处】
:
第七届全国暨华人有机分子和聚合物发光与光电特性学术会议
【发表日期】
:
2011年3期
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