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Metal CMP，especially Cu/barrier CMP is widely used during semiconductor manufacturing process．To reach both proper removal rate and good dishing and erosion，one of the key steps is the protection film formation．Further more，the protection film nature also affects the system’s capability to control corrosion and other surface related defects． In this paper,variable electrochemical techniques were used to characterize the protection film for different slurry systems．Cu corrosion protection behavior，dishing，removal rates were used to correlate with electrochemical data in the slurry system．The fundamentals of protection film were discussed．Electrochemical techniques were proven to be a promising method to help slurry design and provide a guideline to optimize CMP performance.