Recently,hydrogenated amorphous silicon germanium alloy (a-Si1-xGex:H) thin film has been widely used in multi-junction solar cells due to its narrow bandgap compared to that of hydrogenated amorphous silicon (a-Si:H) thin film,resulting in an improvement in the long wavelength response of the sunlight.However,a shortcoming of this material is light-induced degradation,also known as S-W effect.It has been reported that the presence of nanocrystalline grains in amorphous matrix can improve the stability and properties of amorphous thin films.Therefore,it is prospective that some nanocrystallization in the a-Si1-xGex:H thin films is introduced through deposition process or afterword treatment in the film fabrication stage.In this work,the structural evolution and nanocrystallization of a-Si1-xGex:H thin films prepared by plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane and germane diluted with argon have been investigated by X-ray diffraction (XRD) spectroscopy,Raman scattering spectroscopy,and atomic force microscopy (AFM),respectively.