论文部分内容阅读
Effect of the internal field on the resistance switching properties of ferroelectric vanadium doped
【机 构】
:
Department of Physics and Oxide Research Center,Hankuk University of Foreign Studies,Yongin 449-471,
【出 处】
:
The 23rd International Workshop on Oxide Electronics (第23届国际
【发表日期】
:
2016年4期
其他文献
Experimental sharing of nonlocality among multiple observers with one entangled pair via optimal wea
会议
会议