论文部分内容阅读
ZnO is a promising wide bandgap semiconductor material, which may have potential application in ultraviolet lasing.In this presentation, we report a laser diode based on p-type Sb doped ZnO nanowire and n-type ZnO film.The vertically aligned nanowires were synthesized by chemical vapor deposition (CVD) on n-type ZnO film grown by molecular beam epitaxy.