Germanium is one of the most promising candidates for the channel material of future CMOS devices,because of its high carrier mobility.However,a critical issue to realize high performance Ge CMOS devices is to obtain superior Ge p+/n and n+/p junctions with low sheet resistance and low leakage current simultaneously,which cannot be satisfied by traditional dopant activation techniques such as rapid thermal annealing(RTA).In this study,superior Ge p+/n and n+/p junctions have been realized by combining the laser annealing methodology with the spin-on dopant(SOD).It is demonstrated that Ge junctions formed by SOD and laser annealing show excellent diode characteristics of increased on/off ratio and larger forward current,compared with those of Ge junctions fabricated by using the conventional RTA(Figs.).These phenomena are attributable to the steeper doping profile and ultra-shallow junction depth of Ge junctions(~5 nm)with laser annealing.These results indicate the feasibility of the combination of the laser annealing technique with the spin-on dopant in future high performance Ge CMOS devices.