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High flexibility has been one of advantages for one-dimensional semiconductor nanowires (NWs) in wide application of nanoscale integrated circuits.We review our work on NW lasers, including semiconductor NW-microfiber hybrid lasers, semiconductor NW-microdisk cavity hybrid lasers, wavelength tunable lasers and bending effects on NW lasers.The hybrid structure laser combine the high gain of semiconductor and high quality factor of micro cavity, offering low threshold and easily manipulation properties.Wavelength tunability of lasers is one of the most important parameters for practical applications such as optical communications, environmental monitoring and spectroscopy analysis etc.We demonstrate an efficient way to achieve wide wavelength tunable lasers on single non-doped CdSe NWs.The laser wavelengths are tuned from 746 nm to 706 nm by changing the length of a single NW (402-nm-diameter),spanning a range as large as 40 nm.The length dependent wavelength tuning is attributed to absorption-emission-absorption (AEA) of the propagating light in the NWs.We also investigate the bending effects on lasing action of CdSe NWs.Gradually increased threshold and decreased differential efficiency occur when the bending radius of NWs become smaller.The bending loss of laser oscillation is about triple that of photoluminescence (PL), promising a higher sensitive methods of measuring light fluctuations induced by small deformation or strain.