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This study prepared aluminum and gallium co-doped zinc oxide (AGZO) thin films using pulsed direct current magnetron sputtering,and studied the electrical properties,transmittance,effects of texturing,and applicability as the front contact for a-Si:H solar cells.Researchers employed plasma-enhanced chemical vapor deposition (PECVD) to deposit a p-i-n silicon layer,followed by an in-line sputtering system to deposit a film of ZnO:Al with Ag as a rear contact in the fabrication of a-Si:H solar cells.