Silicon-containing materials have been synthesized by chemical vapor deposition (CVD) under nitrogen flow using benzene as a precursor at 800℃.The chaxacteristic of the material were analyzed by means of TEM, SEM and XRD.The composites containing 16 ％ silicon exhibit a reversible capacity about 500mAh/g after 150 cycles with an excellent coulomb efficiency above 99 ％.The impendence reduction gains from the EIS measurements in terms of the electrochemical processes occurring at the electrolyte/electrode surface were also discussed.