Localization of Surface Electrons in Topological Insulators

来源 :第十三届国际凝聚态理论与计算材料学会议(The 13th International Conference on Con | 被引量 : 0次 | 上传用户:HUANJIAN666
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
The electronic transport experiments on topological insulators exhibit a dilemma.A negative cusp in magnetoconductivity is widely believed as a quantum transport signature of the topological surface states, which are immune from localization and exhibit the weak antilocalization.However, the measured conductivity drops logarithmically when lowering temperature, showing a typical feature of the weak localization as in ordinary disordered metals.
其他文献
超导磁通量子比特是目前重要的研究方向之一,其显著优点包括良好的工艺可扩展性、单比特的精确可操控性以及比特间的易耦合性等.但其技术上难以获得足够长的退相干时间,特别
会议
  NaCl is a typically ionic compound.The high-pressure behaviour of NaCl has been extensively studied at pressures experimentally [1-3] and by ab initio simul
会议
缓蚀剂不但能抑制全面腐蚀,而且对局部腐蚀也有很好的缓蚀效果,但以往的研究主要在均匀腐蚀,对局部腐蚀的抑制行为研究相对较少。本文综述了不锈钢、铝合金、碳钢孔蚀缓蚀剂
  The Kondo effect, a phenomenon found in 1930s [1] and interpreted by Kondo in 1964[2], still attracts much attention in recent years due to the great advanc
会议
  The surface states of a topological insulator in a fine-tuned magnetic field are ideal candidates for realizing a topological metal which is protected again
会议
请下载后查看,本文暂不支持在线获取查看简介。 Please download to view, this article does not support online access to view profile.
  The serious mismatch of large local magnetic moments and small ordered moments in iron-based superconductors is one of the unique and essential features of
  The W-Cu system has been widely utilized as high voltage electrical contacts, welding electrodes, heat sinks in microelectronics, packing materials, and div
  In this talk, we will discuss the effects of disorder in the unconventional superconductors from three aspects: (1) we employ the statistic dynamical mean-f
  First-principles calculation reveals that hydrogen, which is abundant in chemical vapor deposition, can significantly improve the uniformity of NV centers i