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A critical review on atomistic simulations of solid-phase epitaxial regrowth of amorphous Si and Ge
【机 构】
:
InstituteoflonBeamPhysicsandMaterialsResearch,ForschungszentrumDresden-Rossendorf
【出 处】
:
9th International Conference on Computer Siumlaation of Radi
【发表日期】
:
2008年10期
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