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5. Improvement Of Crystal Quality Of M-Plane InGaN/GaN Quantum Wells Grown On Tilt-Cut LiAlO By PAMBE F

Improvement Of Crystal Quality Of M-Plane InGaN/GaN Quantum Wells Grown On Tilt-Cut LiAlO By PAMBE F

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：digital78

【摘 要】

：

　　In this work,a series of samples were grown at different growth temperatures,we analyzed the characteristics of M-plane InGaN/GaN quantum wells which were g

【作 者】

：

Yu-Chiao Lin Ikai Lo Wei-Xiang Zhang Ming-Chi Chou 

【机 构】

：

Department of Physics,National Sun Yat-sen University,Kaohsiung,Taiwan

【出 处】

：

2015台湾物理年会

【发表日期】

：

2015年期

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论文部分内容阅读

　　In this work,a series of samples were grown at different growth temperatures,we analyzed the characteristics of M-plane InGaN/GaN quantum wells which were grown on tilt-cut LiAlO(LAO)substrate by plasma-assisted molecular beam epitaxy(PAMBE).

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