Improvement Of Crystal Quality Of M-Plane InGaN/GaN Quantum Wells Grown On Tilt-Cut LiAlO By PAMBE F

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户:digital78
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  In this work,a series of samples were grown at different growth temperatures,we analyzed the characteristics of M-plane InGaN/GaN quantum wells which were grown on tilt-cut LiAlO(LAO)substrate by plasma-assisted molecular beam epitaxy(PAMBE).
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