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In this paper, a random method to simulate atomic behavior in magnetic state selector of atomic hydrogen maser (H-maser) is reported. Using this method, the trajectory of each atom and atomic distribution in the entrance plane to the storage bulb is provided. The effect of the geometry and properties of magnetic state selector on the results are also discussed. We take H0 and L3 as examples and discuss the number of effective hydrogen atoms which are focused into storage bulb. When H0=0.9T, the number of effective atoms is at most and the optimum value of L3 is between 60mm and 100mm in the simulation condition. This approach can be possessed to improve the performance of H-maser.