Photoelectrical energy-conversion devices based on Ⅲ-Nitride semiconductors

来源 :IUPAC 9th International Conference on Novel Materials and th | 被引量 : 0次 | 上传用户:jsww2009
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The re-evaluation of the bandgap energy of InN extends the basic absorption wavelength of Ⅲ-Nitride semiconductors from the infrared (InN at 0.65 eV) through the visible and ultraviolet (UV) (GaN at 3.42 eV) to the deep UV range (AlN at 6.2 eV), which almost cover all the solar spectrum.This unique property provides InGaN film the promising candidate in the photoelectrical energy conversion devices, such as high-performance visible-blind photodiodes and high-efficiency photovoltaic cells.
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