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5. Reduction of global warming gas emission during silicon nitride etching by using C3F6/O2 gas chemist

Reduction of global warming gas emission during silicon nitride etching by using C3F6/O2 gas chemist

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：st65210163

【摘 要】

：

Global warming gas emission such as perfluorocarbon compounds (PFCs) has been an issue in the semiconductor and display industries due to their large global warming potentials (GWPS).

【作 者】

：

I. J. Kim J. H. Lee S. H. Cho N.-E. Lee 

【机 构】

：

School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Plasma etching GWP MMTCE 

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Global warming gas emission such as perfluorocarbon compounds (PFCs) has been an issue in the semiconductor and display industries due to their large global warming potentials (GWPS).

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