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Molecular Beam Epitaxy Growth of InAsBi
【机 构】
：
Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering,Arizona S
【出 处】
：
第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain
【发表日期】
：
2016年11期
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The engineering of topological surface states is a key to realize applicable devices based on topological insulators (TIs).Among various proposals,introducing magnetic impurities into TIs has been pro
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