MoTe2/MoS2 Vertical Heterojunctions with type II Infrared Inter-band Excitation

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户:mark_johnson
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  Semiconductor homojunctions and heterojunctions are the crucial building blocks in modern semiconductor devices, such as transistors, photodetectors, light emitter diodes, solar cells, laser diodes, etc. Recently, 2D materials such as graphene and MoS2 emerge as material stars and have received considerable attention due to their exceptional properties and potential applications in photonic and opto-electronic devices [1], especially the monolayer heterojunctions (mHSs) [2].
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