The rapidly improved computer technology enables plasma simulation to interpret complicated materials processing[1].Especially,the simulation speed was boosted up by parallel computing skill,and thus it is possible to utilize time-consuming particle-in-cell simulations for the investigation of low temperature plasmas for materials processing instead of conventionally utilized fluid simulations.The computation time for a two-dimensional particle-in-ceil simulation to reach a steady state with hundred millions of particles in hundreds of thousand grids is within tens of hours.In this presentation,the parallelized simulation skills with graphics processing units (GPUs) and many integrated cores (MICs) are explained for this achievement.Even with the improved simulation skill,however,it is not easy to reproduce the realistic situation using plasma simulation because there are lots of empty rooms in exact data for the bulk plasma reactions and plasma surface reactions.In this presentation,the method how the simulation and data sets are coupled and the basic skills of modeling and simulation of low temperature plasmas for multiple time scales are explained for the cases of plasma aided etching.