【摘 要】
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Ⅲ-Ⅴ semiconductor nanowire(NW)-offers unique electrical and optical properties therefore viable for the next generation high speed electronics,optoelectronics,biosensing,energy storage devices,etc [1,
【机 构】
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Department of Microtechnology and Nanoscience,Terahertz and Millimetre Wave Laboratory,Photonic Labo
论文部分内容阅读
Ⅲ-Ⅴ semiconductor nanowire(NW)-offers unique electrical and optical properties therefore viable for the next generation high speed electronics,optoelectronics,biosensing,energy storage devices,etc [1,2].From the variety of functional semiconductor materials that have successfully been synthesis as NWs,InAs NWs are very interesting due to their superior material properties such as high electron mobility,strong quantum confinement effect,low effective electron mass and good quality ohmic contacts [1,2,4].
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