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  5. Efficient inverted quantum dot light-emitting devices with TiO2/ZnO bilayer as an electron contact l

Efficient inverted quantum dot light-emitting devices with TiO2/ZnO bilayer as an electron contact l

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：chenshuae9o
【摘 要】
：
The inverted quantum dot light-emitting devices (QD-LEDs) have achieved attention due to their excellent electroluminescence performance.We fabricated inverted QD-LEDs using solution-processed sol-gel
【作 者】
：
Wenyu Ji Wei Xu Pengtao Jing Jialong Zhao 
【机 构】
：
State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics a
【出 处】
：
International Conference on Nanoscience & Technology,China 2
【发表日期】
：
2013年3期
【关键词】
：
quantum dot light-emitting device electroluminescence TiO2/ZnO 
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　　The inverted quantum dot light-emitting devices (QD-LEDs) have achieved attention due to their excellent electroluminescence performance.We fabricated inverted QD-LEDs using solution-processed sol-gel titanium dioxide (TiO2) as the electron transporting layer modified with a thin layer of zinc oxide (ZnO) nanoparticles.The red QD-LEDs exhibits a maximum luminance of 2119, 2908, and 3861 cd/m2 for TiO2, TiO2/ZnO, and ZnO based devices, respectively.
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