This contribution is focused on a self-aligned metallization for crystalline silicon solar cells by ARC patterning (with laser and / or chemical methods) and direct plating of a nickel copper stack.Copper diffusion into silicon is prevented by a plated nickel diffusion barrier.With a lifetime estimation method developed in our labs that uses the cell as a contamination monitor,excellent cell stability has been indicated for measurements with plated nickel barriers.Laboratory PERC cell efficiencies of up to 21.4% have been demonstrated,which is comparable to high efficiency TiPdAg metallization.On these cells,a low contact resistance on a surface phosphorus concentration of below 8x1018 cm-3 has been achieved.By microstructure characterization it has been possible to demonstrate silicide formation from plated nickel layers.Differences in the needed process sequence and the silicide characteristics for different electrolytes have been found.When a soldered ribbon is peeled off together with the metal,silicides remain at the silicon surface,which identifies the silicide-nickel interface as the point of weakness.By adapting the process sequence,excellent adhesion>2 N/mm at 90°peel angle was realized for standard soldered busbars.