Thickness-Dependent Electrical Conductivities In Transition Metal Dichalcogenides Layer Semiconducto

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：jma_sd

【摘要】

：

　　We report on the observation of the substantial thickness (t)-dependent electrical conductivity (σ) at a wide thickness range for MoSe layer semiconductor.

【作者】

：

陳瑞山湯志哲沈韋竹黃鶯聲

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年期

下载到本地 , 更方便阅读

下载此文赞助VIP

声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架

论文部分内容阅读

　　We report on the observation of the substantial thickness (t)-dependent electrical conductivity (σ) at a wide thickness range for MoSe layer semiconductor.

其他文献

Nodal Adsorbate Bound States In Armchair Graphene Nanoribbons:Fano Resonances And Adsorbate Recognit

　　We consider adsorbates on metallic armchair-graphene nanoribbons(AGNRs).An adsorbed atom on a nodal site of the gapless subband in the AGNR is found to indu

会议

Bound StatesNodal

Origin Of Fast Color Switching In Electrochromic Smart Window:In Situ X-Ray Spectroscopy Studies

　　Mo-modified V2O5 thin films were prepared by spin coating from a stable Mo-doped V2O5 sol synthesized using the sol-gel method.The thin films exhibited mult

会议

Effects Of Thermal Annealing And X-Ray Exposure On Local Structures Surrounding Co In(Y.Co)-Codoped

　　Codoping of Y and Co in CeO2 has been found to incur an unconventional bandgap narrowing effect in the host nanocrystal material.The dormant bandgap-tuning

会议

Quantum-Interference Transport Through Surface Layers Of Indium-Doped ZnO Nanowires

　　We have fabricated indium-doped ZnO(IZO)nanowires(NWs)and carried out four-probe electricaltransport measurements on two individual NWs with geometric diame

会议

Indium-doped ZnO (IZO) nanowiresSurface-related conductionWeak-localization ef

DFT Studies Of Bonding Properties And Possible Synthetic Pathways Of Be@IVn(IV=Si And Ge)

　　Be@IVn(IV=Si and Ge)binary clusters have been predicted to have application potential in optoelectronics by some theorists.We have employed DFT method to op

会议

Endohedral binary clustersHirshfeld chargesMayer total valencesWade-Mingos ru

1/F Noise In Single-Crystalline RuO2 Nanowires

　　We have measured the low frequency noise of single-crystal RuO2 nanowires with diameters of~20 and~90 nm.The magnitudes of low frequency noise have 1/f depe

会议

Quantum Transport In Thue-Morse Mesoscopic Aharonov-Bohm Rings

　　Resonant transports in the quasiperiodic Thue-Morse array of Aharonov-Bohm rings are investigated.Pattern of the Q factor at the resonances shows periodic v

会议

quantum interferencequasiperiodic structureAB ringsresonance

An Unbiased Optimization Approach To Study The Structural Evolution Of Gold Nanoclusters

　　In this work,we propose two modifications to the well-known basin hopping(BH)optimization algorithm [D.J.Wales and J.P.Doye,J.Phys.Chem.A 101,5111(1997)] to

会议

optimizationdensity-functional tight-bindingmagnetic propertiesgold nanoclust

Fabrication Of Rewritable And Shape-Conformal Memory Devices On Arbitrary Substrates

　　Fabrication of functional devices on arbitrary non-conventional substrates has significant advantages for broadening devices applications and the developmen

会议

Thermoelectric Performance Enhancement In BiSbTe Composites With Silicon Inclusions

　　In the last few years,the thermoelectric(TE)materials have been broadly investigated due to their potential application in energy saving by generating elect

会议

Thickness-Dependent Electrical Conductivities In Transition Metal Dichalcogenides Layer Semiconducto

与本文相关的学术论文