The emerging technological demands for flexible electronic devices have compelled researchers to look beyond the current silicon-based electronics.A flexible version of traditional thin lead zirconium titanate (Pb1.1Zr0.2Ti0.8O3,PZT) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena.However,fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance.