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High-performance bottom contact (BC) Organic field-effect transistor (OFET) is required for their potential application in the industrialized production due to the remarkable advantage in the size-controlled fine lithography processing.One of the major limits in fabricating high-performance OFET in BC configuration is the large contact resistance (RcW) at organic/electrode interface, which results in a pronounced current loss.So far, the contact potential barrier and wettability mismatch are considered to be the main origins of the contact resistance.Different wettabilities of electrode and dielectric surface in BC configuration disturb the continuous growth of the organic active layer, leading to an inferior charge transmission.