Direct growth of silicon (Si) wafer,so called as ribbon,is well known as a cost-effective process for photovoltaic application due to the absence of kerf-loss (Si loss in sawing process).There are two approaches to gain a wafer from Si melt;horizontal and vertical growth process.Despite high growth velocity can be obtained from horizontal growth process,small grains result in the lower conversion efficiency of solar cell using these wafers.In the case of vertical growth process,larger grains are gained because the crystal-growth direction is parallel to wafer growth.However,this process has limitation of increase of growth velocity.In this presentation,new horizontal growth will be introduced and we have tried to make the crystal-growth of this process be parallel to wafer growth.As a result,crystal-growth direction is parallel to wafer growth direction in our process.Wafer was grown with average velocity of 60 cm/min and average grain size was 1.13 ± 0.3mm.Brief explanation of our process and microstructure of grown wafer will be given as well.