Investigation of electron cyclotron resonance plasma-assisted atomic layer deposition Al2O3 thin fil

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户:eclipse
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Without extra-heating,Al2O3 thin films were deposited on hydrogen-terminated Si substrate etched in hydrofluoric acid by a home-made electron cyclotron resonance (ECR) plasma-assisted atomic layer deposition (ALD) with trimethylaluminum (TMA) and oxygen gas used as precursor and oxidant,respectively.
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