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Correlation between background impurities and Bi content in GaAsBi grown by molecular beam epitaxy
【机 构】
:
School of Physic Science and Technology, ShanghaiTech University,100 Haike Road , Shanghai, 201210,
【出 处】
:
第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain
【发表日期】
:
2016年11期
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