A submicron SiC powder and a mixture of submicron SiC powder and polycarbosilane(PCS)were hotpressed with 3 wt%Y2O3 or 1 wt%AlN-Lu2O3 additives at 2000oC or 2050oC for 6 h under an applied pressure of 40 MPa in a nitrogen atmosphere.The electrical resistivity of both SiC ceramics was on the order of 10-2Ωcm.This low electrical resistivity in bulk polycrystalline SiC ceramics was attributed to the n-type doping of SiC grains with nitrogen and confinement of an electrically insulating sintering additive,Y2O3 or Lu2O3 in the junction areas among the grains.