NiOx Layer with Na2S Doping Improves the Conductivity and Interface Defects of the Hole Transport La

来源 :第八届新型太阳能材料科学与技术学术研讨会 | 被引量 : 0次 | 上传用户:laopengtou
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  NiOx has a wide band gap,good conductivity,high optical transmittance,and stable chemical properties.It matches the energy level of perovskite materials and is low in price.Therefore,it has gradually become an excellent material for the hole transport layer (HTL) of perovskite solar cells.However,the conductivity of unmodified NiOx (10-4S·cm-1) is low,which makes the efficiency of the device relatively low.This paper reports an effective doping method,namely,doping sodium sulfide (Na2S) into NiOx precursors to improve the conductivity of NiOx and the crystallinity of perovskite.Studies have shown that Na+ can significantly increase the conductivity of the NiOx HTL,while S2-can modify the surface of NiOx,ameliorate the contact between NiOx and perovskite and the quality of the perovskite film,thereby significantly improving the photovoltaic performance of the device.The carrier dynamics shows that the doping of Na2S can reduce the interface defects between the HTL and the perovskite layer,and enchance the hole extraction at the interface.As a result,the champion efficiency of the p-i-n structure solar cell device reaches 16.9%.Here,we provide a simple and effective method to further improve the performance ofperovskite solar cells.
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