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  5. Polycrystalline Silicon Films Prepared by Rapid Thermal Annealing

Polycrystalline Silicon Films Prepared by Rapid Thermal Annealing

来源 :2010中国可再生能源科技发展大会 | 被引量 : 0次 | 上传用户：zhxg01
【摘 要】
：
The amorphous silicon (a-Si) thin films were deposited by PECVD and then were annealed by RTP.Using the Fourier infrared conversion spectrum scanning, electronic microscope and X-ray-diffraction techn
【作 者】
：
Weizhong SUN Caichi LIU Qiuyan HAO Huijuan ZHANG Xinjian XIE Zhi QIAO 
【机 构】
：
Institute of Information Function Material, Hebei University of Technology Tianjin, 300130, China
【出 处】
：
2010中国可再生能源科技发展大会
【发表日期】
：
2010年10期
【关键词】
：
Rapid thermal processing (RTP) amorphous silicon (a-Si) crystallinity 
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　　The amorphous silicon (a-Si) thin films were deposited by PECVD and then were annealed by RTP.Using the Fourier infrared conversion spectrum scanning, electronic microscope and X-ray-diffraction techniques, the properties of annealed a-Si thin film were analyzed.It was found that the hydrogen of thin films vanished completely when annealed at 600℃ for 60s.The results showed the surface of thin films became smoother with multi-step annealing than one step annealing.The results suggest that the multi-step annealing can improve the surface quality and crystallinity of thin films.
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