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5. Interface induced room-temperature magnetodielectric effect and resistance switching in PbZr0.52Ti0.

Interface induced room-temperature magnetodielectric effect and resistance switching in PbZr0.52Ti0.

来源 :2011年材料表面与界面国际大会 | 被引量 : 0次 | 上传用户：Lu153

【作 者】

：

Y.P.Yao Y.K.Liu Y.Hou S.N.Dong 

【机 构】

：

Hefei National Laboratory for Physical Sciences at Microscale,Department of Physics,University of Sc

【出 处】

：

2011年材料表面与界面国际大会

【发表日期】

：

2011年9期

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