论文部分内容阅读
Laser Raman Spectroscopy Study of Surfaces of Semiconductors GaAs and GaP Modified by P,As and Al Io
【机 构】
：
Lnstitute of Inorganic Chemistry and Electrochemistry, Tbilisi 0186, Georgia
【出 处】
：
第35届国际光谱会议(The Colloquium Spectroscopicum Internationale XXX
【发表日期】
：
2007年1期
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