Optically generated electron-hole bilayers in mixed-type GaAsAIAs quantum wells

来源 :The 13th International Conference on Physics of Light-Matter | 被引量 : 0次 | 上传用户：ellydyl

【摘要】

：

　　We report recent experimental studies of an electron-hole bilayer system,in which long-lived excess electrons and holes reside in the wide and narrow wells

【作者】

：

Hailin Wang

【机构】

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DepartmentofPhysics,UniversityofOregon,Eugene,OR97403,USA

【出处】

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The 13th International Conference on Physics of Light-Matter

【发表日期】

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2012年6期

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论文部分内容阅读

　　We report recent experimental studies of an electron-hole bilayer system,in which long-lived excess electrons and holes reside in the wide and narrow wells of a mixed-type GaAs/AIAs quantum well (MTQW) structure,respectively,with the two wells separated by an AIAs barrier.

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