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The influence of Al deposited upon the growth of AlGaAs alloy layer on GaAs(001) surface are investigated.After obtaining different contents and deposition rate of Al in AlGaAs, depositions of AlGaAs were carried out by molecular-beam epitaxy (MBE).The real space ultrahigh vacuum scanning tunneling microscopy(STM) images showed the disciplinary changes from different AlGaAs surface morphology.Reflection high energy electron diffraction (RHEED) has also been used to estimate AlGaAs deposition.As STM images and RHEED oscillations showed, the pits coverage and roughness of deposition surfaces caused by the higher chemical reactivity and slower surface migration rate of Al were considered as a possible explanations of the influence.The reasons of the effects are proposed, a conjecture for the formation of surfaces morphology and its influence on subsequent growth is also proposed.