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5. Effect of thickness variation of PbS colloidal quantum dots for thin-film transistors

Effect of thickness variation of PbS colloidal quantum dots for thin-film transistors

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：albertleee

【摘 要】

：

We fabricated PbS colloidal quantum dot (CQD) thin-film transistors (TFTs),and studied their characteristics depending on the CQD channel thickness.

【作 者】

：

Seokhyun Yoon Seung Jin Heo Hyun Jae Kim 

【机 构】

：

School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seou

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

PbS Colloidal quantum dots thin-film transistor channel thickness 

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We fabricated PbS colloidal quantum dot (CQD) thin-film transistors (TFTs),and studied their characteristics depending on the CQD channel thickness.

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