InAs/GaSb quantum well(QW)structures attract a great attention due to their unique type Ⅱ broken-gap alignment [1].Such heterojunctions are important for design of QC lasers and MIR-superlattice photodiodes [2].Previously,energy band structure,magnetotransport,magneto-optical and photoluminescence properties were studied in the GaSb/InAs/GaSb system with a single InAs QW grown by MBE [3].However,electroluminescence and photovoltaic effect in such structures were not researched.Here we report on study of electroluminescent and photoelectrical properties of the n-GaSb/InAs/p-GaSb nanostructures with a single InAs QW grown by MOVPE.For the first time QW InAs/GaSb structure was grown by MOVPE in AIXTRON-200 system with a horizontal reactor on n-GaSb(100)substrates.The method of MOVPE grown was described in [4].