Gate Controlled Spin-Orbit Interaction In InGaAs/InAs Heterostructure

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：xueyanli122

【摘要】

：

　　The current semiconductor scaling technology is expected to end in the next decade.It is urgent to develop a new scheme of semiconductor device.Spin,an intr

【作者】

：

Che-Wei Chang Chin-Hung Chen T.-M.Chen Ju-Chun Fan I.Farrer G.Creeth D.A.Ritchie

【机构】

：

Department of Physics,National Cheng Kung University,Tainan 701,Taiwan

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年期

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　　The current semiconductor scaling technology is expected to end in the next decade.It is urgent to develop a new scheme of semiconductor device.Spin,an intrinsic quantum property,plays a key role in the nextgeneration semiconductor device.

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