【摘 要】
:
The formation of the pn-heterojunction of a thin film CIGS solar cell is established by depositing a thin n-type cadmium sulphide (CdS) layer onto the CIGS
【机 构】
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Process Development Department,Manz Group
【出 处】
:
SNEC 第八届(2014)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
The formation of the pn-heterojunction of a thin film CIGS solar cell is established by depositing a thin n-type cadmium sulphide (CdS) layer onto the CIGS absorber surface.Since many physical properties of CdS (e.g.lattice constant, bandgap energy, refractive index, etc.) lie in between those of CIGS and the ZnO materials, the intermediate CdS is often referred to as buffer layer.The CdS serves as a very efficient surface passivation of the CIGS layer, establishes the CIGS/CdS hetero-junction (band alignment), covers shunts, and finally, protects of the hetero-interface from damage caused by the highly energetic ZnO-sputtering process.
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