Investigation into the Mechanism of Reduction of Pottasium Bec under Cool Plasma Conditions,using a

来源 :6th Asia-Pacific Winter Conference on Plasma Spectrochemistr | 被引量 : 0次 | 上传用户：cnreon

【摘要】

：

　　The control of metal impurities in process chemicals used in semiconductor manufacturing is critical to achieve the required device performance and yield.As

【作者】

：

KatsuoMizobuchi;NoriyukiYamada;MasakazuYukinari;

【机构】

：

Agilent Technologies Japan,Ltd.,9-1,Takakura-cho,Hachioji-shi,Tokyo,192-0033 Japan

【出处】

：

6th Asia-Pacific Winter Conference on Plasma Spectrochemistr

【发表日期】

：

2015年期

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　　The control of metal impurities in process chemicals used in semiconductor manufacturing is critical to achieve the required device performance and yield.As device architecture becomes smaller and performance continually increases,the level at which impurities must be controlled becomes ever more stringent.

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Investigation into the Mechanism of Reduction of Pottasium Bec under Cool Plasma Conditions,using a

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