【摘 要】
：
Gallium nitride(GaN),as a typical representative of the third generation of broad bandgap semiconductor materials,has been widely used in the field of optoelectronic and microelectronic devices becaus
【机 构】
：
Department of Engineering Mechanics,and Key Laboratory of Soft Machines and Smart Devices of Zhejian
【出 处】
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中国计算力学大会2018暨国际华人计算力学大会2018
论文部分内容阅读
Gallium nitride(GaN),as a typical representative of the third generation of broad bandgap semiconductor materials,has been widely used in the field of optoelectronic and microelectronic devices because of its excellent physical and chemical properties[1].In applications,GaN-based nanomaterials suffer from a complex physical environment,such as stress field,electromagnetic field,and temperature field,ect.
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