Epitaxial Growth of Single Crystal and Twin Superlattice InAs Nanowires by Chemical Vapor Deposition

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：tangtang132

【摘要】

：

　　Semiconductor InAs nanowires have been widely explored,because InAs is a direct bandgap semiconductor with a small bandgap,a small effective electron mass a

【作者】

：

Yingjie Xing Kan Li Jingyun Wang Ming Li Hongqi Xu

【机构】

：

Nanodevices and Department of Electronics,Peking University,China

【出处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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　　Semiconductor InAs nanowires have been widely explored,because InAs is a direct bandgap semiconductor with a small bandgap,a small effective electron mass and a high room-temperature electron mobility [1].

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Epitaxial Growth of Single Crystal and Twin Superlattice InAs Nanowires by Chemical Vapor Deposition

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