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We investigate the performance of mass production tools for Passivated Emitter and Rear Cell (PERC) applications.We produce monocrystalline silicon p-type solar cells applying the PERC baseline process at ISFH with industrial-like processes and wafer sizes, focusing our study on rear side passivation with Al2O3/SiNx and Local Contact Opening (LCO) by means of laser ablation.We achieve an energy conversion efficiency of 20.3% applying the Manz VCS1200 PECVD tool for Al2O3/SiNx deposition as well as the ns laser platform LAS2400 for LCO.In contrast to the laboratory approach of forming an Al2O3/SiNx back side passivation using separate tools, the Manz PECVD tool grows an Al2O3/SiNx stack in one single process step within less than one minute without breaking the vacuum.An even higher efficiency of 20.5% is obtained by using the ns LCO on a high-quality, lab-type passivation stack applying Atomic Layer Deposited (ALD)-Al2O3 and SiNx capping.The ns LCO process, featuring a Flat-Top beam profile, shows comparable PERC cell results to a high-quality low-damage ps laser ablation reference process, facilitating the integration of PERC upgrade tools into industrial mass production.With this Laser technique we achieve the desired line width within one laser pulse, thus allowing reduced process time.